PART |
Description |
Maker |
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba. TOSHIBA[Toshiba Semiconductor]
|
UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING N-channel enhancement type MOS FET
|
NEC
|
2SK1405 2SK1405-E |
15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel MOS FET
|
Renesas Electronics Corporation
|
2SJ555 2SJ555-E |
60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
RQJ0201UGDQA RQJ0201UGDQATL-E |
3400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET SC-59A, MPAK-3 Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc. Renesas Electronics Corporation
|
2SJ552 2SJ552L 2SJ552S 2SJ552L/S |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching Power switching MOSFET
|
HITACHI[Hitachi Semiconductor]
|
2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
RJK0368DPA-00-J0 RJK0368DPA10 |
20 A, 30 V, 0.0224 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
|